| PART |
Description |
Maker |
| NNCD68PL NNCD6.8PL |
5-PIN SUPER SMALL MINI MOLD FLAT LEAD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUAD TYPE: COMMON ANODE 5针超小微型模具扁平引线式静电放电二极管噪声裁剪四型：共阳
ESD noise clipping diode 5pin XSOF(flat-lead type)
|
NEC, Corp.
NEC[NEC]
|
| NNCD6.8RL |
ESD noise clipping diode 5-pin XSOF (flat lead type) low capactance
5-PIN SUPER SMALL MINI MOLD (FLAT LEAD TYPE) ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUAD TYPE: COMMON ANODE) 5针超小微型模具（扁平引脚型）静电放电噪声裁剪二极管（四型：共阳极
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD4.3A NNCD4 |
100 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE 静电放电噪声裁剪二极00毫瓦
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NNCD5.1G NNCD5.6G NNCD27G NNCD6.2G NNCD6.8G NNCD4. |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD 静电放电噪声裁剪二极管季刊类型：共阳针迷你模
静电放电噪声裁剪二极管季刊类型：共阳5针迷你模
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| CPDURT5V0C-HF |
Halogen Free ESD Diodes, V-C=14.5V, V-ESD=8kV
Low Profile SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQR5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDER12V0U-HF |
Halogen Free ESD Diodes, V-C=24V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDF5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| TAR5S16 TAR5S19 TAR5S24 |
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Corporation
|
| IRF3202SPBF |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
|
International Rectifier
|
| TA1310ANG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| SSM6P16FE |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
